IPW65R110CFD MOSFET High-Performance Power Electronics Solution for Automation Control
IPW65R110CFD N-Channel Power MOSFET
Product Description:
The IPW65R110CFD N-Channel Power MOSFET is a high-speed, low-loss device designed for use in power management applications where a low on-resistance is desired. This MOSFET features an integrated gate driver, which provides a fast and robust switching solution. With its low RDS(on) and high-side current handling capabilities, the IPW65R110CFD is ideal for a wide range of applications.
Product Features:
• High-Speed Switching
• Low On-Resistance
• Integrated Gate Driver
• High-Side Current Handling Capability
• RoHS Compliant
Product Specifications:
• Drain-Source Voltage (VDS): 30V
• Gate-Source Voltage (VGS): ±20V
• Continuous Drain Current (ID): 110A
• Drain-Source On-Resistance (RDS(on)): 0.0065Ω
• Package: TO-252 (D-PAK)
• Operating Temperature: -55°C to 150°C
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