2N7002L MOSFET Power Electronics TO-236-3 Transistor High Speed Switching Linear Applications
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | | |
| Base Product Number | |
The 2N7002L is a N-Channel enhancement mode Field Effect Transistor (FET) in a TO-236-3 metal package. This device is suitable for use in switching and linear applications due to its low on resistance at a maximum of 2.5 ohms, making it ideal for high speed switching applications. It is also capable of withstanding high drain-source voltages up to 20V with a maximum drain current of 500mA. This FET is designed for low voltage and low current applications, making it suitable for a variety of automotive and industrial applications. The 2N7002L features an ESD rating of up to 2kV and a maximum operating temperature of 125°C. The device is also RoHS compliant and lead-free, making it a reliable and safe choice for a wide range of applications.
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2N7002L MOSFET Power Electronics TO-236-3 Transistor High Speed Switching Linear Applications Images
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