Infineon IHW30N135R5XKSA1 High-Power IGBT Module Optimized for Automation Applications
Product Name: IHW30N135R5XKSA1 IGBT Power Module
Product Description:
The IHW30N135R5XKSA1 is an insulated-gate bipolar transistor (IGBT) power module. This device is designed for high-frequency switching applications and provides a high blocking voltage of 1300V, a low on-state voltage drop of 2V, and low capacitance. It is suitable for use in a variety of applications such as motor control, renewable energy, and industrial automation.
Features:
• High blocking voltage of 1300V
• Low on-state voltage drop of 2V
• Low capacitance
• Suitable for motor control, renewable energy, and industrial automation applications
• Easy to install and use
Specifications:
• Package Type: TO-247
• Voltage Rating: 1300V
• Current Rating: 30A
• Power Dissipation: 75W
• Operating Temperature Range: -40°C to +150°C
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